NiO/β-Ga2O3 heterojunction diodes, deep level transient spectroscopy, photoluminescence, Raman, electrical characteristics, modeling
InGaP, substrate orientation, defects, electrical characteristics, conduction mechanism, Photoluminescence
MAPbI3, Br-FASnI3, Deep levels, SnO2 ETL, Cu2O HTL, Perovskite solar cell
TRNSYS, Absorption cooling, Souk Ahras City, Taguchi method, Solar fraction, collector efficiency
β-Ga₂O₃ thin films, spin coating, Al doping, sapphire substrate, quartz substrate
β-Ga2O3 thin film, sol-gel, spin-coating, preheating temperature