default author photo

Arianna Jaroszynska

Institute of High Pressure Physics of the Polish Academy of Sciences

ul.Sokolowska 29/37

Warsaw, Warsaw 01-142

Poland

  • Institute of High Pressure Physics of the Polish Academy of Sciences

SCHOLARLY PAPERS

4

DOWNLOADS

190

TOTAL CITATIONS

0

Scholarly Papers (4)

Actions:
Email selected abstracts
1.

Europium Diffusion in Ammonothermal Gallium Nitride

Number of pages: 10 Posted: 31 Jan 2023 Last Revised: 04 Dec 2024
Arianna Jaroszynska, Ewa Grzanka, Mikolaj Grabowski, Grzegorz Staszczak, Igor Prozheev, Rafal Jakiela, Filip Tuomisto and Michal Bockowski
Institute of High Pressure Physics of the Polish Academy of Sciences, Institute of High Pressure Physics, Polish Academy of Sciences, affiliation not provided to SSRN, Institute of High Pressure Physics, Polish Academy of Sciences, University of Helsinki, affiliation not provided to SSRN, University of Helsinki and Polish Academy of Sciences (PAS) - Institute of High Pressure Physics
Downloads 56 (1,000,027)

Abstract:

Loading...

Ultra-high pressure annealing (UHPA), Ion implantation, Europium, Diffusion doping, Ammonothermal GaN (Am-GaN), Gallium nitride

2.

Aluminum Gallium Nitride Grown by Halide Vapor Phase Epitaxy: Growth on Misoriented Gallium Nitride Substrates

Number of pages: 15 Posted: 01 Oct 2025
Arianna Jaroszynska, Petro Sadovy, Lutz Kirste, Karol Pozyczka, Robert Kucharski, Michal Bockowski and Tomasz Sochacki
Institute of High Pressure Physics of the Polish Academy of Sciences, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Polish Academy of Sciences (PAS) - Institute of High Pressure Physics and affiliation not provided to SSRN
Downloads 55 (1,052,702)

Abstract:

Loading...

Aluminum-gallium nitride (AlGaN), Halide Vapor Phase Epitaxy (HVPE), crystal growth, growth morphology, Gallium nitride (GaN), seed misorientation

3.

Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE

Number of pages: 10 Posted: 16 Jun 2023 Last Revised: 04 Dec 2024
Kacper Paweł Sierakowski, Rafal Jakiela, Arianna Jaroszynska, Michal Fijalkowski, Malgorzata Iwinska, Tomasz Sochacki, Marcin Turek, Akira Uedono, Michael Reshchikov and Michal Bockowski
affiliation not provided to SSRN, affiliation not provided to SSRN, Institute of High Pressure Physics of the Polish Academy of Sciences, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Maria Curie-Sklodowska University, University of Tsukuba, affiliation not provided to SSRN and Polish Academy of Sciences (PAS) - Institute of High Pressure Physics
Downloads 49 (1,074,648)

Abstract:

Loading...

Gallium Nitride, Ion Implantation, Ion Diffusion, Positron Annihilation Spectroscopy, Low-temperature Photoluminescence, Secondary Ion Mass Spectrometry

4.

The influence of hydrogen admixture in the carrier gas on Aluminum Gallium Nitride growth in Halide Vapor Phase Epitaxy

Number of pages: 14 Posted: 01 Sep 2025
Arianna Jaroszynska, Petro Sadovy, Karol Pozyczka, Michal Fijalkowski, Pawel Kempisty, Robert Kucharski, Michal Bockowski and Tomasz Sochacki
Institute of High Pressure Physics of the Polish Academy of Sciences, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Polish Academy of Sciences (PAS) - Institute of High Pressure Physics, affiliation not provided to SSRN, Polish Academy of Sciences (PAS) - Institute of High Pressure Physics and affiliation not provided to SSRN
Downloads 30 (1,345,526)

Abstract:

Loading...

gallium nitride (GaN), Aluminum-gallium nitride (AlGaN), Halide Vapor Phase Epitaxy (HVPE), crystal growth, Supersaturation, hydrogen admixture