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Karol Pozyczka

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

2

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85

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Scholarly Papers (2)

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1.

Aluminum Gallium Nitride Grown by Halide Vapor Phase Epitaxy: Growth on Misoriented Gallium Nitride Substrates

Number of pages: 15 Posted: 01 Oct 2025
Arianna Jaroszynska, Petro Sadovy, Lutz Kirste, Karol Pozyczka, Robert Kucharski, Michal Bockowski and Tomasz Sochacki
Institute of High Pressure Physics of the Polish Academy of Sciences, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Polish Academy of Sciences (PAS) - Institute of High Pressure Physics and affiliation not provided to SSRN
Downloads 55 (1,052,702)

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Aluminum-gallium nitride (AlGaN), Halide Vapor Phase Epitaxy (HVPE), crystal growth, growth morphology, Gallium nitride (GaN), seed misorientation

2.

The influence of hydrogen admixture in the carrier gas on Aluminum Gallium Nitride growth in Halide Vapor Phase Epitaxy

Number of pages: 14 Posted: 01 Sep 2025
Arianna Jaroszynska, Petro Sadovy, Karol Pozyczka, Michal Fijalkowski, Pawel Kempisty, Robert Kucharski, Michal Bockowski and Tomasz Sochacki
Institute of High Pressure Physics of the Polish Academy of Sciences, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Polish Academy of Sciences (PAS) - Institute of High Pressure Physics, affiliation not provided to SSRN, Polish Academy of Sciences (PAS) - Institute of High Pressure Physics and affiliation not provided to SSRN
Downloads 30 (1,345,526)

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gallium nitride (GaN), Aluminum-gallium nitride (AlGaN), Halide Vapor Phase Epitaxy (HVPE), crystal growth, Supersaturation, hydrogen admixture