100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China
Beijing University of Technology
ferroelectric field-effect transistor, Dipole, polarity reversal, oxygen scavenging, charge neutrality level
Insulated Gate Bipolar Transistor, junction temperature, measurement deviation, reliability, saturation voltage drop method
Insulated gate bipolar transistor, IGBT, temperature distribution, temperature inhomogeneity, infrared thermal imager.