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Shiwei Feng

Beijing University of Technology

100 Ping Le Yuan

Chaoyang District

Beijing, 100020

China

  • Beijing University of Technology

SCHOLARLY PAPERS

4

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146

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0

Scholarly Papers (4)

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1.

Polarity reversal of dipole at the SiO2/HZO interface in FeFETs by oxygen scavenging of TiN

Number of pages: 27 Posted: 01 Jan 2026
Manru Gong, Lixing Zhou, Xiaolei Wang, Saifei Dai, Junshuai Chai, Cong Dai, Shuaijie Rong, Yunhao Chen, Chunsheng Guo, Shiwei Feng and Yaming Zhang
Beijing University of Technology, Beijing University of Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology and Beijing University of Technology
Downloads 63 (961,006)

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ferroelectric field-effect transistor, Dipole, polarity reversal, oxygen scavenging, charge neutrality level

2.

Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors

Number of pages: 10 Posted: 15 Feb 2023
Yumeng Li, Chunsheng Guo, Di Zhao, Shiwei Zhang, Shijie Pan, Hui Zhu and Shiwei Feng
Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology and Beijing University of Technology
Downloads 42 (1,157,785)

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Insulated Gate Bipolar Transistor, junction temperature, measurement deviation, reliability, saturation voltage drop method

3.

Γ-Irradiation Induced Trapping Effects on Off-State and On-State P-Gan Gate High-Electron-Mobility Transistors

Number of pages: 7 Posted: 19 Feb 2025
Zixuan Feng, Shijie Pan, Shiwei Feng, Xiang Zheng, Yaning Wang, Boyang Zhang and Xiaozhuang Lu
Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, University of Bristol, Beijing University of Technology, Beijing University of Technology and Beijing University of Technology
Downloads 26 (1,399,036)

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Current-transient method, γ-irradiation, p-GaN gate high-electron-mobility transistor (HEMT), traps.

4.

Study Of Temperature Inhomogeneity Of Insulated Gate Bipolar Transistor Module Based On Electrical Method

Number of pages: 11 Posted: 22 Jul 2023
Di Zhao, Chunsheng Guo, Yumeng Li, Shiwei Feng, Hui Zhu and Yaming Zhang
Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology, Beijing University of Technology and Beijing University of Technology
Downloads 15 (1,509,872)

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Insulated gate bipolar transistor, IGBT, temperature distribution, temperature inhomogeneity, infrared thermal imager.