Huainan
China
Anhui University of Science and Technology
A1. Characterization, A1. Defects, A1. Surface Morphology, A3. Chemical vapor deposition processes, B2. Semiconducting silicon compounds.
4H-SiC, Basal plane dislocation, Nitrogen doping, Anisotropic etching, Sector angle, Dislocation conversion
4H-SiC, epitaxial growth, First-principles calculations, surface migration
excited-state intramolecular proton transfer，density functional theory，time-dependent density functional theory
Kaolinite, Urea intercalation modification, Hydrated sodium ion [Na(H₂O)₅]⁺, Molecular simulation
excited state intramolecular proton transfer, BTC-NH2, hydrogen bond
SiC2 molecules, 4H-SiC, adsorption energy, Density functional theory
Coal mud particles, Hydrated cations, Kaolinite, Density functional theory
Kaolinite, Urea intercalation modification, Hydrated sodium ion, Interfacial adsorption
