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Ning Gu

Liaoning University

Shenyang

China

  • Liaoning University

SCHOLARLY PAPERS

3

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230

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Scholarly Papers (3)

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1.

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

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Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Number of pages: 16 Posted: 13 Jun 2024
Ning Gu, Junwei Yang and Huaping Song
Liaoning University, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory
Downloads 66 (921,129)

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A1. Characterization, A1. Defects, A1. Surface Morphology, A3. Chemical vapor deposition processes, B2. Semiconducting silicon compounds

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Number of pages: 16 Posted: 27 Apr 2024
Ning Gu, Junwei Yang and Huaping Song
Liaoning University, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory
Downloads 32 (1,341,098)

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A1. Characterization, A1. Defects, A1. Surface Morphology, A3. Chemical vapor deposition processes, B2. Semiconducting silicon compounds

2.

Investigating - the Influence of Nitrogen Doping Concentration on the Conversion Ratio of Basal Plane Dislocations in 4h-Sic Epilayers

Number of pages: 14 Posted: 10 Jan 2025
Ning Gu, Junwei Yang and Hongyu Ma
Liaoning University, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Anhui University of Science and Technology
Downloads 96 (725,554)

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A1. Characterization, A1. Defects, A1. Surface Morphology, A3. Chemical vapor deposition processes, B2. Semiconducting silicon compounds.

3.

Atomic-Scale Insights into Sic Homoepitaxy: A Computational Study

Number of pages: 13 Posted: 08 Jan 2025
Ning Gu and Hongyu Ma
Liaoning University and Anhui University of Science and Technology
Downloads 36 (1,249,711)

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4H-SiC, epitaxial growth, First-principles calculations, surface migration