Author Page for Huaping Song

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Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

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Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Number of pages: 16 Posted: 13 Jun 2024

Liaoning University, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory

Downloads 66 (921,129)

Abstract:

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Number of pages: 16 Posted: 27 Apr 2024

Ning Gu, Junwei Yang and Huaping Song

Liaoning University, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory

Downloads 32 (1,341,098)

Huaping Song

Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory

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Scholarly Papers (1)

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Abstract:

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Abstract: