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Junwei Yang

Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory

Dongguan, 523808

China

  • Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory

SCHOLARLY PAPERS

4

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286

TOTAL CITATIONS

0

Scholarly Papers (4)

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1.

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Downloads 32 (704,534)

Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor

Number of pages: 16 Posted: 27 Apr 2024
Ning Gu, Junwei Yang and Huaping Song
Liaoning University, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory
Downloads 32 (1,341,098)

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A1. Characterization, A1. Defects, A1. Surface Morphology, A3. Chemical vapor deposition processes, B2. Semiconducting silicon compounds

2.

The Etching Behaviour of Dislocations in N-Doped Sic Substrate

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The Etching Behaviour of Dislocations in N-Doped Sic Substrate

Number of pages: 11 Posted: 06 Mar 2023
Huaping Song, Shuai Sun, Junwei Yang, Hongxia Qu, Wenjun Wang and Jikang Jian
Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory, Guangdong University of Technology, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory, affiliation not provided to SSRN and Guangdong University of Technology
Downloads 75 (848,302)

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Keywords: A1. defects, A1. Characterization, A1. Etching, A1. Optical microscopy, B2. Semiconducting silicon compounds.

The Etching Behaviour of Dislocations in N-Doped Sic Substrate

Number of pages: 11 Posted: 06 Mar 2023
Huaping Song, Shuai Sun, Junwei Yang, Hongxia Qu, Wenjun Wang and Jikang Jian
Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory, Guangdong University of Technology, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory, affiliation not provided to SSRN and Guangdong University of Technology
Downloads 21 (1,486,852)

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Keywords: A1. defects, A1. Characterization, A1. Etching, A1. Optical microscopy, B2. Semiconducting silicon compounds.

3.

Investigating - the Influence of Nitrogen Doping Concentration on the Conversion Ratio of Basal Plane Dislocations in 4h-Sic Epilayers

Number of pages: 14 Posted: 10 Jan 2025
Ning Gu, Junwei Yang and Hongyu Ma
Liaoning University, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Anhui University of Science and Technology
Downloads 94 (725,554)

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A1. Characterization, A1. Defects, A1. Surface Morphology, A3. Chemical vapor deposition processes, B2. Semiconducting silicon compounds.

4.

Nitrogen Doping Suppresses the Conversion of Basal Plane Dislocations in 4H-SiC Epilayers

Number of pages: 19 Posted: 10 Dec 2025
Ning Gu, Junwei Yang and Hongyu Ma
Anhui University of Science and Technology, Chinese Academy of Sciences (CAS) - Songshan Lake Materials Laboratory and Anhui University of Science and Technology
Downloads 64 (933,592)

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4H-SiC, Basal plane dislocation, Nitrogen doping, Anisotropic etching, Sector angle, Dislocation conversion