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Jingyuan Shi

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

2

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Scholarly Papers (2)

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1.

Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

Number of pages: 10 Posted: 11 Apr 2023
Kexin Deng, Sen Huang, Xinhua Wang, Qimeng Jiang, Haibo Yin, Jie Fan, Guanjun Jing, Ke Wei, Yingkui Zheng, Jingyuan Shi and Xinyu Liu
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 109 (654,668)

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GaN, MOS-HEMTs, Al2O3, post deposition annealing, isothermal capture transient spectroscopy

2.

Abnormal Transconductance Curve Shift and Rf Performance Induced by Impact-Ionization in Inas Channel Hemts

Number of pages: 11 Posted: 18 Oct 2024
yongheng Gong, Yuxuan Chen, Jingyuan Shi, Yongbo Su, Dayong Zhang, Wuchang Ding and Zhi Jin
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Chinese Academy of Sciences (CAS)
Downloads 34 (1,263,436)

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HEMTs； InAs；impact-ionization； transconductance； small-signal equivalent model； RF performance.