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Ke Wei

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

3

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244

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Scholarly Papers (3)

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1.

Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

Number of pages: 10 Posted: 11 Apr 2023
Kexin Deng, Sen Huang, Xinhua Wang, Qimeng Jiang, Haibo Yin, Jie Fan, Guanjun Jing, Ke Wei, Yingkui Zheng, Jingyuan Shi and Xinyu Liu
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 109 (654,668)

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GaN, MOS-HEMTs, Al2O3, post deposition annealing, isothermal capture transient spectroscopy

2.

N-Polar Gan-Aln-Diamond Structure Fabricated by Modified Surface Active Bonding and Selective Dry Etching

Number of pages: 22 Posted: 23 Mar 2025
Ye Tian, Lishu Wu, Guoliang Ma, Yu Zhou, Fengwen Mu, Yu Chen, Sen Huang, Ke Wei, Peng Xu, Chao Yuan, Qian Li, Xinhua Wang, Qian Sun and Xinyu Liu
affiliation not provided to SSRN, affiliation not provided to SSRN, Wuhan University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Wuhan University, Wuhan University, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Science and Technology of China (USTC) - School of Nano-Tech and Nano-Bionics and affiliation not provided to SSRN
Downloads 86 (765,566)

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N-polar GaN, GaN-on-Diamond, modified surface activated bonding, selective dry etching

3.

Ka Band Gan Hemts with Segmented Discrete Field Plate

Number of pages: 6 Posted: 20 Mar 2024
Ruizhe Zhang, Yichuan Zhang, Xiaoqiang He, Kaiyu Wang, Jianchao Wang, Jiaqi Guo, Ailing Zhou, Sheng Zhang, Jiebin Niu, Yankui Li, Ke Wei, Sen Huang and Xinyu Liu
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 49 (1,074,648)

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mmW RF device, high breakdown voltage, field plate