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Montserrat Nafria

Autonomous University of Barcelona

Plaça Cívica

Cerdañola del Valles

Barcelona, 08193

Spain

  • Autonomous University of Barcelona

SCHOLARLY PAPERS

5

DOWNLOADS

149

TOTAL CITATIONS

0

Scholarly Papers (5)

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1.

Comprehensive Statistical Analysis of Random Telegraph Noise: Impact of Gate Voltage, Temperature, and Bias Time

Number of pages: 6 Posted: 11 Aug 2025
Javier Martin-Martinez, Nazanin Baghban-Bousari, Rafael Castro-Lopez, Deborah Eric, Elisenda Roca, R. Rodriguez, Marc Porti Pujal, Francisco Vidal Fernandez and Montserrat Nafria
Autonomous University of Barcelona, Autonomous University of Barcelona, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Autonomous University of Barcelona, Autonomous University of Barcelona, affiliation not provided to SSRN and Autonomous University of Barcelona
Downloads 61 (951,658)

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Random Telegraph NoiseReliabilityCMOS devicesstatistical analysis

2.

Exploitation of Otfts Variability for Pufs Implementation and Impact of Aging

Number of pages: 5 Posted: 25 Apr 2023
Marc Porti, Sergi Claramunt, Gerard Palau, August Arnal, Albert Crespo-Yepes, S. Ogier, Eloi Ramon and Montserrat Nafria
Autonomous University of Barcelona, Autonomous University of Barcelona, Autonomous University of Barcelona, Microelectronics Institute of Barcelona, Autonomous University of Barcelona, affiliation not provided to SSRN, Microelectronics Institute of Barcelona and Autonomous University of Barcelona
Downloads 30 (1,318,317)

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OTFT, variability, reliability, PUF, aging

3.

Resistive Switching Like-Behavior in Fd-Soi Ω-Gate Transistors

Number of pages: 5 Posted: 06 Jun 2023
Carlos Andrés Valdivieso León, R. Rodriguez, Albert Crespo-Yepes, J. Martin-Martinez and Montserrat Nafria
affiliation not provided to SSRN, Autonomous University of Barcelona, Autonomous University of Barcelona, Autonomous University of Barcelona and Autonomous University of Barcelona
Downloads 21 (1,436,435)

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Resistive Switching, nanowires, FD-SOI

4.

On the Role of Power Dissipation in the Post-Bd Behavior of Fdsoi Nanowire Fets

Number of pages: 4 Posted: 13 Jun 2025
Rishab Goyal, Albert Crespo-Yepes, Marc Porti Pujal, R. Rodriguez and Montserrat Nafria
affiliation not provided to SSRN, Autonomous University of Barcelona, Autonomous University of Barcelona, Autonomous University of Barcelona and Autonomous University of Barcelona
Downloads 20 (1,448,301)

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Aging, FDSOI, nanowire, high-k, reliability, Dielectric Breakdown.

5.

A Statistical Characterization of Dielectric Breakdown in Fdsoi Nanowire Transistors

Number of pages: 7 Posted: 11 Aug 2025
Rishab Goyal, Albert Crespo-Yepes, Marc Porti Pujal, R. Rodriguez and Montserrat Nafria
affiliation not provided to SSRN, Autonomous University of Barcelona, Autonomous University of Barcelona, Autonomous University of Barcelona and Autonomous University of Barcelona
Downloads 17 (1,481,165)

Abstract:

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Failure, Dielectric Breakdown, FD-SOI, NW FETs, high-k, reliability, power consumption, lifetime.