default author photo

Viktor Sverdlov

Vienna University of Technology

SCHOLARLY PAPERS

5

DOWNLOADS

184

TOTAL CITATIONS

0

Scholarly Papers (5)

1.

Micromagnetic Modeling of Double Spin-Torque Magnetic Tunnel

Number of pages: 4 Posted: 01 Aug 2023
Vienna University of Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, Institute for Microelectronics/TU Wien and Vienna University of Technology
Downloads 45 (1,121,190)

Abstract:

Loading...

Spin and charge drift-diffusion, Spin-transfer torque, Magnetic tunnel junctions, STT-MRAM, Double spin-torque MTJ

2.

Temperature Modeling and Pulse Shaping Strategies for Energy Optimization in 2t-Sot-Mram

Number of pages: 5 Posted: 27 Jun 2025
Tomas Hadamek and Viktor Sverdlov
affiliation not provided to SSRN and Vienna University of Technology
Downloads 38 (1,209,354)

Abstract:

Loading...

Two-terminal SOT-MRAM, Pulse-Shaping Strategies, Reduced Energy Consumption, Temperature, Hot-Electron Heating

3.

Interlayer Exchange Coupling for Enhanced Performance in Spin-Transfer Torque Mram Devices

Number of pages: 4 Posted: 07 Oct 2024
affiliation not provided to SSRN, affiliation not provided to SSRN, Institute for Microelectronics/TU Wien, affiliation not provided to SSRN and Vienna University of Technology
Downloads 37 (1,222,651)

Abstract:

Loading...

Interlayer Exchange Coupling, Spin Transfer Torques, Spin Dynamics, Spintronic Memory, Multilayer Architectures

4.

Sos Pseudo-Fefets after Furnace or Rapid Annealings and Thining by Thermal Oxidation

Number of pages: 9 Posted: 19 Jun 2023
Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics, affiliation not provided to SSRN, Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics, affiliation not provided to SSRN, affiliation not provided to SSRN, Vienna University of Technology and affiliation not provided to SSRN
Downloads 32 (1,290,922)

Abstract:

Loading...

Silicon, sapphire, ferroelectric, HfO2 interlayer, phases, pseudo-MOSFETs

5.

A Multi-Level Cell for Ultra-Scaled Stt-Mram Realized by Back-Hopping

Number of pages: 4 Posted: 06 Jun 2023
affiliation not provided to SSRN, affiliation not provided to SSRN, Institute for Microelectronics/TU Wien, affiliation not provided to SSRN and Vienna University of Technology
Downloads 32 (1,290,922)

Abstract:

Loading...

Back-Hopping, Spin Transfer Torques, Ultra-Scaled MRAM Cells, Perpendicular Magnetic Anisotropy, WritingError, Multi-Level Cells