Korea, Republic of (South Korea)
Kyungpook National University
Amorphous oxide semiconductor, thin-film transistors, ultrathin channel, high performance, solution process
AlGaN/GaN heterojunction, Ion implantation, Enhancement mode high electron mobility transistor (E-mode HEMT), GaN power device
Oxide semiconductor, Thin-film transistors (TFTs), Bias instability, Threshold voltage dependency, Aluminum doping, Degradation mechanism