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Xiaoli Tian

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

4

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90

TOTAL CITATIONS

0

Scholarly Papers (4)

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1.

Impact of Jfet Width on Conduction Characteristics for P-Channel Sic Igbt

Number of pages: 7 Posted: 26 Dec 2023
Kunhui Xu, Xiaoli Tian, Wei wei, Xinhua Wang and Yun Bai
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 39 (1,196,171)

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SIC IGBT, JFET width, mechanism, conduction characteristics

2.

Sic Trench Igbt with N-Barrier Layer to Enhance Conductivity Modulation

Number of pages: 12 Posted: 06 Aug 2025
Ruixue Mai, Xiaoli Tian, Yu Yang, Wei wei, Chengzhan Li, Yun Bai, Chengyue Yang, Kaikai Wang and Yidan Tang
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 22 (1,448,301)

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silicon carbide, IGBT, forward voltage drop, switching loss, reliability

3.

High Blocking Voltage and Low On-State Voltage Drop 4h-Sic P-Channel Igbts with Optimized Multizone Floating Field Rings

Number of pages: 13 Posted: 13 Jun 2025
Ruixue Mai, Xiaoli Tian, Xinyu Liu, Xinhua Wang, Yun Bai, Wei wei, Yuhao Guo, Chengyue Yang, Chengzhan Li and Yidan Tang
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 22 (1,436,435)

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silicon carbide, insulated gate bipolar transistor, multizone floating field ring, lifetime enhancement technology

4.

Trench-isolated IGCT with low on-state voltage drop and enhanced maximum controllable current

Number of pages: 26 Posted: 17 Apr 2026
Ruixue Mai, Xiaoli Tian, Xinyu Liu, Xinhua Wang, Yun Bai, Wei wei, Chengyue Yang and Yidan Tang
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 7 (1,561,096)

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integrated gate commutated thyristor, gate-cathode breakdown voltage, maximum controllable current, trench isolation