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Ruixue Mai

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

2

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29

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0

Scholarly Papers (2)

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1.

Sic Trench Igbt with N-Barrier Layer to Enhance Conductivity Modulation

Number of pages: 12 Posted: 06 Aug 2025
Ruixue Mai, Xiaoli Tian, Yu Yang, Wei wei, Chengzhan Li, Yun Bai, Chengyue Yang, Kaikai Wang and Yidan Tang
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 22 (1,448,301)

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silicon carbide, IGBT, forward voltage drop, switching loss, reliability

2.

Trench-isolated IGCT with low on-state voltage drop and enhanced maximum controllable current

Number of pages: 26 Posted: 17 Apr 2026
Ruixue Mai, Xiaoli Tian, Xinyu Liu, Xinhua Wang, Yun Bai, Wei wei, Chengyue Yang and Yidan Tang
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 7 (1,561,096)

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integrated gate commutated thyristor, gate-cathode breakdown voltage, maximum controllable current, trench isolation