Author Page for Hyejung Choi

Robust Resistive Switching in Solution-Processed Copper Bromide Binary Metal Halide System

Number of pages: 34 Posted: 03 Oct 2024

Juyoung Jin, Young-Seok Song, Ankita Nikam, Hyunjung Lee, Seungyeon Kim, Hee Yun Yang, Hyejung Choi, Byung Joon Moon, Sukang Bae, Jongwon Yoon, Seoung-Ki Lee and Tae-Wook Kim

Jeonbuk National University, Jeonbuk National University, Jeonbuk National University, Jeonbuk National University, Jeonbuk National University, affiliation not provided to SSRN, SK hynix Inc, affiliation not provided to SSRN, affiliation not provided to SSRN, Korea Institute of Materials Science, Pusan National University and Jeonbuk National University

Downloads 65 (916,100)

Abstract:

2.

Novel Source/Drain Contact Structure for A-Igzo Devices: Oxygen-Scavenger-Layer Metal-Interlayer-Semiconductor (Osl Mis) Approach

Number of pages: 27 Posted: 22 Aug 2024

Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim and Hyun-Yong Yu

Korea University, Korea University, Korea University, Korea Institute of Science and Technology (KIST), SK hynix Inc, SK hynix Inc, SK hynix Inc and Korea University

Downloads 63 (933,592)

Citation 1

Abstract:

3.

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Downloads 55 (1,041,696)

2

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Number of pages: 28 Posted: 20 Jun 2025

Sungjoo Song, Jongyoun Park, Sangsu Lee, Jeong-Kyu Kim, Jeonghoon Bae, Hyejung Choi and Hyun-Yong Yu

Korea University, Korea University, Korea University, Stanford University, SK hynix Inc, SK hynix Inc and Korea University

Downloads 40 (1,224,220)

Abstract:

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Number of pages: 34 Posted: 21 Jul 2025

Sungjoo Song, Jongyoun Park, Sangsu Lee, Jeong-Kyu Kim, Jeonghoon Bae, Hyejung Choi and Hyun-Yong Yu

Korea University, Korea University, Korea University, Stanford University, SK hynix Inc, SK hynix Inc and Korea University

Downloads 15 (1,579,999)

Hyejung Choi

SK hynix Inc

3

183

1

Scholarly Papers (3)

Robust Resistive Switching in Solution-Processed Copper Bromide Binary Metal Halide System

Abstract:

Novel Source/Drain Contact Structure for A-Igzo Devices: Oxygen-Scavenger-Layer Metal-Interlayer-Semiconductor (Osl Mis) Approach

Abstract:

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Abstract:

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Abstract: