367 Panama St
Stanford, CA 94305
United States
Stanford University
oxide semiconductor, Tin monoxide, mobility, off current, Threshold voltage
oxide semiconductor, Tin monoxide, mobility, On-off current ratio, Source-drain contact, Interlayer
Graphene, MoTe2, Polarity control, Metal-interlayer-semiconductor, Source/drain contact
a-IGZO, Contact resistance, AZO, Metal-interlayer-semiconductor, Source/drain contact