default author photo

Jeong-Kyu Kim

Stanford University

367 Panama St

Stanford, CA 94305

United States

SCHOLARLY PAPERS

4

DOWNLOADS

245

TOTAL CITATIONS

0

Scholarly Papers (4)

A Novel Azo Capping Approach on Sno Thin-Film Transistors for Efficient Threshold Voltage Modulation and Electrical Performance Enhancement

Number of pages: 39 Posted: 10 Jun 2025
Korea University, Korea University, Chonnam National University, Korea University, Stanford University and Korea University
Downloads 41 (1,238,337)

Abstract:

Loading...

oxide semiconductor, Tin monoxide, mobility, off current, Threshold voltage

A Novel Azo Capping Approach on Sno Thin-Film Transistors for Efficient Threshold Voltage Modulation and Electrical Performance Enhancement

Number of pages: 31 Posted: 02 May 2025
Korea University, Korea University, Chonnam National University, Korea University, Stanford University and Korea University
Downloads 28 (1,415,710)

Abstract:

Loading...

oxide semiconductor, Tin monoxide, mobility, off current, Threshold voltage

2.

Ultra-low Contact Resistivity and Boosting Performance of P-type SnO-TFTs with Metal-Interlayer-Semiconductor Contact Using Transition Metal Oxide

Number of pages: 28 Posted: 21 Nov 2025
Korea University, Korea University, Chonnam National University, Korea University, Stanford University, Korea University and Korea University
Downloads 64 (942,565)

Abstract:

Loading...

oxide semiconductor, Tin monoxide, mobility, On-off current ratio, Source-drain contact, Interlayer

3.

Novel Fermi-Level Alignment Approach to Schottky Barrier Height Modulation in Mote2 with Metal-Graphene-Semiconductor Source/Drain Contact

Number of pages: 31 Posted: 02 May 2025
Korea University, Chonnam National University, Korea University, Korea University, Stanford University and Korea University
Downloads 57 (1,000,027)

Abstract:

Loading...

Graphene, MoTe2, Polarity control, Metal-interlayer-semiconductor, Source/drain contact

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Number of pages: 28 Posted: 20 Jun 2025
Korea University, Korea University, Korea University, Stanford University, SK hynix Inc, SK hynix Inc and Korea University
Downloads 40 (1,224,220)

Abstract:

Loading...

a-IGZO, Contact resistance, AZO, Metal-interlayer-semiconductor, Source/drain contact

Highly Enhanced Schottky Barrier Heights in Source/Drain Contacts of Igzo Fets Using Azo-Based Mis Structures with Post-Interlayer Deposition Annealing (Pida)

Number of pages: 34 Posted: 21 Jul 2025
Korea University, Korea University, Korea University, Stanford University, SK hynix Inc, SK hynix Inc and Korea University
Downloads 15 (1,579,999)

Abstract:

Loading...

a-IGZO, Contact resistance, AZO, Metal-interlayer-semiconductor, Source/drain contact