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Seung Hwan Kim

Chonnam National University

SCHOLARLY PAPERS

5

DOWNLOADS

221

TOTAL CITATIONS

0

Scholarly Papers (5)

A Novel Azo Capping Approach on Sno Thin-Film Transistors for Efficient Threshold Voltage Modulation and Electrical Performance Enhancement

Number of pages: 39 Posted: 10 Jun 2025
Korea University, Korea University, Chonnam National University, Korea University, Stanford University and Korea University
Downloads 41 (1,238,337)

Abstract:

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oxide semiconductor, Tin monoxide, mobility, off current, Threshold voltage

A Novel Azo Capping Approach on Sno Thin-Film Transistors for Efficient Threshold Voltage Modulation and Electrical Performance Enhancement

Number of pages: 31 Posted: 02 May 2025
Korea University, Korea University, Chonnam National University, Korea University, Stanford University and Korea University
Downloads 28 (1,415,710)

Abstract:

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oxide semiconductor, Tin monoxide, mobility, off current, Threshold voltage

2.

Ultra-low Contact Resistivity and Boosting Performance of P-type SnO-TFTs with Metal-Interlayer-Semiconductor Contact Using Transition Metal Oxide

Number of pages: 28 Posted: 21 Nov 2025
Korea University, Korea University, Chonnam National University, Korea University, Stanford University, Korea University and Korea University
Downloads 64 (942,565)

Abstract:

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oxide semiconductor, Tin monoxide, mobility, On-off current ratio, Source-drain contact, Interlayer

3.

Novel Fermi-Level Alignment Approach to Schottky Barrier Height Modulation in Mote2 with Metal-Graphene-Semiconductor Source/Drain Contact

Number of pages: 31 Posted: 02 May 2025
Korea University, Chonnam National University, Korea University, Korea University, Stanford University and Korea University
Downloads 57 (1,000,027)

Abstract:

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Graphene, MoTe2, Polarity control, Metal-interlayer-semiconductor, Source/drain contact

4.

Interfacial Dipole Engineering for Schottky Barrier Height Lowering Via Crystalline Magnesium Oxide on Semiconductor Surface

Number of pages: 22 Posted: 08 Jul 2025
Chonnam National University, affiliation not provided to SSRN, Korea Institute of Science and Technology (KIST), Korea University, affiliation not provided to SSRN and Korea Institute of Science and Technology (KIST)
Downloads 20 (1,448,301)

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Contact resistance, Schottky barrier height, Fermi-level pinning, Crystallization, Magnesium oxide

5.

Light Polarization as a Control Knob for Resistive Switching in Chiral Perovskite Memory

Number of pages: 23 Posted: 09 Jun 2026
affiliation not provided to SSRN, Hanyang University, affiliation not provided to SSRN, Hanyang University, Chonnam National University, affiliation not provided to SSRN, affiliation not provided to SSRN, Hanyang University, Hanyang University and affiliation not provided to SSRN
Downloads 11

Abstract:

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chiral perovskite, resistive random-access memory (RRAM), chiroptical property, CPL modulation, structural engineering