oxide semiconductor, Tin monoxide, mobility, off current, Threshold voltage
oxide semiconductor, Tin monoxide, mobility, On-off current ratio, Source-drain contact, Interlayer
Graphene, MoTe2, Polarity control, Metal-interlayer-semiconductor, Source/drain contact
Contact resistance, Schottky barrier height, Fermi-level pinning, Crystallization, Magnesium oxide
chiral perovskite, resistive random-access memory (RRAM), chiroptical property, CPL modulation, structural engineering