14 gil 5 Hwarangno, Seongbuk-gu
Seoul, 02792
Korea, Republic of (South Korea)
Korea Institute of Science and Technology (KIST)
Source/drain contact, contact resistance, metal/interlayer/semiconductor structure, Fermi-level unpinning, reduced graphene oxide
oxide semiconductor, contact resistivity, Schottky barrier height, Fermi-level pinning, MIS contact
a-IGZO, contact resistance, Schottky barrier height, Metal-Interlayer-Semiconductor, Oxygen areal density, Plasma treatment
conductive bridge random access memory, oxygen vacancy, ionic bond, magnesium oxide
negative differential resistance, peak voltage, peak-to-valley current ratio, ternary inverter, multi-valued logic
Laser crystallization, epitaxial growth, magnesium oxide, germanium, monolithic 3-dimensional structure
