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Zijian Yuan

affiliation not provided to SSRN

SCHOLARLY PAPERS

1

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0

Scholarly Papers (1)

1.

Enhancement of Positive Bevel Β-Ga2o3 Trench Mos Barrier Schottky Diode by Post-Etching Treatment

Number of pages: 6 Posted: 30 Aug 2024
affiliation not provided to SSRN, Xidian University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Xidian University, Xidian University, Xidian University and Xidian University
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Abstract:

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β-Ga2O3, Trench MOS barrier Schottky (TMBS), positive bevel, post-etching treatment.