default author photo

Xuefeng Zheng

Xidian University

SCHOLARLY PAPERS

2

DOWNLOADS

54

TOTAL CITATIONS

0

Scholarly Papers (2)

1.

Enhancement of Positive Bevel Β-Ga2o3 Trench Mos Barrier Schottky Diode by Post-Etching Treatment

Number of pages: 6 Posted: 30 Aug 2024
affiliation not provided to SSRN, Xidian University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Xidian University, Xidian University, Xidian University and Xidian University
Downloads 34 (1,277,121)

Abstract:

Loading...

β-Ga2O3, Trench MOS barrier Schottky (TMBS), positive bevel, post-etching treatment.

2.

Carrier Gas Modulated Surface Dynamics and Crystalline Quality of (100) β-Ga2O3 Homoepitaxial Films via MOCVD

Number of pages: 8 Posted: 08 Jun 2026
Xidian University, Xidian University, Xidian University, Xidian University, affiliation not provided to SSRN, Xidian University, Xidian University, Xidian University, Xidian University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University, Zhejiang University, Xidian University, Xidian University and Xidian University
Downloads 20

Abstract:

Loading...

β-Ga2O3, MOCVD, Carrier gas, Boundary layer mass transport, Surface diffusion, Step flow growth