No. 2 South Taibai Road, Xi’an, Shaanxi
Xi'an, 710071
China
Xidian University
β-Ga2O3, MOCVD, Carrier gas, Boundary layer mass transport, Surface diffusion, Step flow growth
β-Ga2O3, MOCVD, Precursor-sequence engineering, Homoepitaxial growth, Interfacial reaction control, Growth-mode transition