β-Ga2O3, nanoindentation, mechanical behaviors, deformation mechanism, anisotropy
β-Ga2O3, casting method, large-scale single crystals
β-Ga2O3, defects, Defect-selective etching, KOH solution
β-Ga2O3, Electronic property, KPFM, EMMI, KOH solution etching
β-Ga2O3, (100) HVPE, hillock, stacking fault, out-of-phase boundary
β-Ga2O3, MOCVD, Carrier gas, Boundary layer mass transport, Surface diffusion, Step flow growth
β-Ga₂O₃, etch, Molten alkali, defects, FIB-TEM
β-Ga2O3, MOCVD, Precursor-sequence engineering, Homoepitaxial growth, Interfacial reaction control, Growth-mode transition