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Hui Zhang

Zhejiang University

SCHOLARLY PAPERS

8

DOWNLOADS

337

TOTAL CITATIONS

0

Scholarly Papers (8)

1.

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Number of pages: 17 Posted: 04 Jul 2023
Zhejiang University, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Zhejiang University and Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials
Downloads 82 (790,029)

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β-Ga2O3, nanoindentation, mechanical behaviors, deformation mechanism, anisotropy

2.

Epitaxy-Ready 6-Inch (100) Β-Ga2o3 Wafers Grown by a Casting Method

Number of pages: 12 Posted: 18 Jul 2025
Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, affiliation not provided to SSRN, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University and Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials
Downloads 71 (907,769)

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β-Ga2O3, casting method, large-scale single crystals

3.

An Effectively Koh Solution Etching Method in Defects Characterizing of (100) Β-Ga2o3

Number of pages: 13 Posted: 31 Dec 2024
Zhejiang University, Zhejiang University, affiliation not provided to SSRN, affiliation not provided to SSRN, Zhejiang University, Zhejiang University, Zhejiang University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University and Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials
Downloads 62 (951,658)

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β-Ga2O3, defects, Defect-selective etching, KOH solution

4.

Electronic Properties of Defects on the (100) Casting Β-Ga2o3: Phenomena and Mechanisms

Number of pages: 16 Posted: 29 May 2025
Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, affiliation not provided to SSRN, Zhejiang University, Zhejiang University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University and Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials
Downloads 46 (1,145,425)

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β-Ga2O3, Electronic property, KPFM, EMMI, KOH solution etching

5.

Edge-Dependent Stacking Fault Upward Transformation in Pseudo-Symmetric (100) β-Ga₂O₃ HVPE Epitaxy: A Common Source of Hillocks

Number of pages: 38 Posted: 17 Feb 2026
Zhejiang University, Zhejiang University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University, Hangzhou Garen Semiconductor Co., Ltd, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University, Zhejiang University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University and Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials
Downloads 26 (1,385,945)

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β-Ga2O3, (100) HVPE, hillock, stacking fault, out-of-phase boundary

6.

Carrier Gas Modulated Surface Dynamics and Crystalline Quality of (100) β-Ga2O3 Homoepitaxial Films via MOCVD

Number of pages: 8 Posted: 08 Jun 2026
Xidian University, Xidian University, Xidian University, Xidian University, affiliation not provided to SSRN, Xidian University, Xidian University, Xidian University, Xidian University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University, Zhejiang University, Xidian University, Xidian University and Xidian University
Downloads 25

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β-Ga2O3, MOCVD, Carrier gas, Boundary layer mass transport, Surface diffusion, Step flow growth

7.

Effective etching of (010) β-Ga2O3 with molten KOH + NaOH for defects revelation

Number of pages: 13 Posted: 28 Feb 2026
Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, affiliation not provided to SSRN, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University and Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials
Downloads 19 (1,491,251)

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β-Ga₂O₃, etch, Molten alkali, defects, FIB-TEM

8.

Atomic layer precursor sequence engineering for high quality (−201) β-Ga2O3 homoepitaxy

Number of pages: 26 Posted: 07 Jul 2026
Xidian University, Xidian University, Xidian University, affiliation not provided to SSRN, Xidian University, Xidian University, Xidian University, Xidian University, Hangzhou Garen Semiconductor Co., Ltd, Zhejiang University, Zhejiang University, Xidian University, Xidian University, Xidian University and Xidian University
Downloads 6

Abstract:

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β-Ga2O3, MOCVD, Precursor-sequence engineering, Homoepitaxial growth, Interfacial reaction control, Growth-mode transition