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Honghwi Park

affiliation not provided to SSRN

  • affiliation not provided to SSRN

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Unveiling Chemical and Physical Bulk Defects in Ultrathin Indium Oxide Transistors with Yttrium Oxide Capping via Nanoscale Channel Thickness Modulation

Number of pages: 38 Posted: 11 Oct 2025
Dohyeon Gil, Se Jin Park, Jinhong Park, Jae Wook Ahn, Minsu Choi, Jaewon Jang, Honghwi Park, Jaehoon Park, Xue Zhang, Jin-Hyuk Bae and Do-Kyung Kim
Kyungpook National University, Kyungpook National University, Kyungpook National University, Kyungpook National University, Kyungpook National University, Kyungpook National University, affiliation not provided to SSRN, Hallym University, Shandong University of Science and Technology, Kyungpook National University and Kangwon National University
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Thin-film transistors, ultrathin indium oxide, bulk defects, channel thickness, positive bias instability