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Xiaodong Pi

Zhejiang University

38 Zheda Road

Hangzhou, 310058

China

SCHOLARLY PAPERS

12

DOWNLOADS

772

TOTAL CITATIONS

2

Scholarly Papers (12)

1.

Optimization of the Thermal Field of 8-Inch Sic Crystal Growth by Pvt Method with “3 Separation Heater Method”

Number of pages: 11 Posted: 21 Mar 2023
Zhejiang University, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, affiliation not provided to SSRN, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University
Downloads 134 (544,251)

Abstract:

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A1. Computer simulation, A2. Growth from vapor phase, A2. Single crystal growth, B1. Silicon carbide

2.

Effect of Subsurface Damages in the Seed Crystal on the Crystal Quality of 4h-Sic Single Crystals Grown by the Pvt Technology

Number of pages: 11 Posted: 23 Sep 2023
Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University of Technology
Downloads 122 (592,433)

Abstract:

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4H silicon carbide, subsurface damages, physical vapor transport growth, crystalline defects

3.

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Number of pages: 24 Posted: 03 Oct 2023
Zhejiang University of Technology, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University, Zhejiang University of Technology, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center
Downloads 101 (689,572)

Abstract:

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SiC, Computer simulation, Growth from vapor, Dislocation density, Alexander-Haasen model

4.

Influence of Nitrogen Doping Concentration on Mechanical Properties of 4h-Sic: A Comparative Study of C and Si Faces

Number of pages: 21 Posted: 23 Jan 2025
Zhejiang University, Zhejiang University, Zhejiang University, affiliation not provided to SSRN, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center
Downloads 91 (765,566)

Abstract:

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silicon carbide, doping concentration, mechanical properties, nanoindentation, surface energy

5.

Growth of 100-mm-long SiC single crystals with reduced thermal stresses by the pulling physical vapor transport (PPVT) method

Number of pages: 18 Posted: 09 Dec 2025
Zhejiang University of Technology, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University
Downloads 58 (989,921)

Abstract:

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A1. Computer simulation, A1. Thermal stress, A2.Growth from vapor, A2.Single crystal growth

6.

Effects of crystal shape on the solution flow behavior in the top-seeded solution growth of 4H-SiC single crystals

Number of pages: 19 Posted: 19 Jan 2026
affiliation not provided to SSRN, Zhejiang University of Technology, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, affiliation not provided to SSRN, affiliation not provided to SSRN, Zhejiang Sci-tech University - Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center
Downloads 55 (1,031,043)

Abstract:

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SiC, Computer simulation, Top-seeded solution growth, Fluid flows, Heat transfer

7.

Optimization of Carbon Transport in Top-Seeded Solution Growth of Al-Doped Sic

Number of pages: 26 Posted: 21 Jun 2024
Zhejiang University, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University
Downloads 49 (1,074,648)
Citation 2

Abstract:

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Silicon Carbide, Top-seeded solution growth, Numerical simulation, Machine Learning

8.

Discrimination of Dislocation in Highly Doped N-Type 4h-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Number of pages: 14 Posted: 14 May 2024
Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center
Downloads 46 (1,109,210)

Abstract:

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Silicon carbide, dislocations, electrochemical etching, holes

9.

Direct Observation on Impurity Distribution in Phosphorous/Boron Co-Doped Si Nanocrystals

Number of pages: 11 Posted: 05 Feb 2023
Zhejiang University, Nanjing University, Nanjing University, Nanjing University, Ningbo University, Université et INSA de Rouen - Groupe de Physique des Matériaux, affiliation not provided to SSRN, Zhejiang University, Nanjing University and Nanjing University
Downloads 34 (1,263,436)

Abstract:

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Si nanocrystal, doping, impurity distribution, P-B pair

10.

Interfacial stress concentration and dislocation generation within 4H-SiC driven by carbon inclusions: insights from experimental and molecular dynamics

Number of pages: 25 Posted: 06 Sep 2025
Zhejiang University, affiliation not provided to SSRN, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang Sci-tech University - Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center
Downloads 29 (1,345,526)

Abstract:

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carbon inclusions, 4H-SiC, stress, dislocation, molecular dynamics

11.

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

Number of pages: 33 Posted: 22 Feb 2024
Sun Yat-sen University (SYSU), Sun Yat-sen University (SYSU), The Chinese University of Hong Kong (CUHK), University of Cambridge, Sun Yat-sen University (SYSU), Sun Yat-sen University (SYSU), Sun Yat-sen University (SYSU), Zhejiang University, Chinese University of Hong Kong - Department of Physics, Sun Yat-sen University (SYSU) and Sun Yat-sen University (SYSU)
Downloads 29 (1,332,057)

Abstract:

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halide perovskites, single crystals, memristors, artificial synapse, neuromorphic computing.

12.

A Self-Powered and Highly Stable Ultraviolet Photodetector based on the Heterojunction of C8-BTBT/4H-SiC

Number of pages: 14 Posted: 27 Feb 2026
Zhejiang University, Zhejiang University, Zhejiang University, Wuxi University, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University
Downloads 24 (1,436,435)

Abstract:

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Ultraviolet Photodetector, Heterojunction, 4H-SiC, C8-BTBT, UV communication