38 Zheda Road
Hangzhou, 310058
China
Zhejiang University
A1. Computer simulation, A2. Growth from vapor phase, A2. Single crystal growth, B1. Silicon carbide
4H silicon carbide, subsurface damages, physical vapor transport growth, crystalline defects
SiC, Computer simulation, Growth from vapor, Dislocation density, Alexander-Haasen model
silicon carbide, doping concentration, mechanical properties, nanoindentation, surface energy
A1. Computer simulation, A1. Thermal stress, A2.Growth from vapor, A2.Single crystal growth
SiC, Computer simulation, Top-seeded solution growth, Fluid flows, Heat transfer
Silicon Carbide, Top-seeded solution growth, Numerical simulation, Machine Learning
Silicon carbide, dislocations, electrochemical etching, holes
Si nanocrystal, doping, impurity distribution, P-B pair
carbon inclusions, 4H-SiC, stress, dislocation, molecular dynamics
halide perovskites, single crystals, memristors, artificial synapse, neuromorphic computing.
Ultraviolet Photodetector, Heterojunction, 4H-SiC, C8-BTBT, UV communication