China
Zhejiang University of Technology
4H silicon carbide, subsurface damages, physical vapor transport growth, crystalline defects
SiC, Computer simulation, Growth from vapor, Dislocation density, Alexander-Haasen model
OGLCM-ELM, Frost texture features, Defrosting control, Image identification, Air-source heat pump
Microwave plasma jet, Spline curve electrode, Plasma machining, Dwell time algorithm
4H-SiC, Shear rheological polishing, Surface topography, subsurface damage, positron annihilation spectroscopy