Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Abstract

Physical vapor transport is the dominant method for growing 200 mm SiC crystals, and the crystals produced by this method still have dislocations, which affect the performance of the device. In this study, the finite element analysis of 200 mm SiC crystal growth has been conducted to investigate the influencing parameters on the dislocations. The calculations are based on the model of multiple resistance heating proposed in our previous work. The transient heat transfer process for crystal growth has been calculated. Then dynamic mesh technique was employed to consider the shape evolution of the ingot during the crystal growth process. Finally, the distributions of the internal stress and dislocation density have been obtained based on the Alexander-Haasen model. The comparison of different parameters provides guidance for reducing the thermal stress and dislocation density in the 200 mm SiC crystal growth.

Keywords: SiC, Computer simulation, Growth from vapor, Dislocation density, Alexander-Haasen model