38 Zheda Road
Hangzhou, Zhejiang 310058
China
Zhejiang University
4H silicon carbide, subsurface damages, physical vapor transport growth, crystalline defects
SiC, Computer simulation, Growth from vapor, Dislocation density, Alexander-Haasen model
Silicon carbide, dislocations, electrochemical etching, holes
4H-SiC, Shear rheological polishing, Surface topography, subsurface damage, positron annihilation spectroscopy