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Rong Wang

Zhejiang University

38 Zheda Road

Hangzhou, Zhejiang 310058

China

SCHOLARLY PAPERS

4

DOWNLOADS

306

TOTAL CITATIONS

0

Scholarly Papers (4)

1.

Effect of Subsurface Damages in the Seed Crystal on the Crystal Quality of 4h-Sic Single Crystals Grown by the Pvt Technology

Number of pages: 11 Posted: 23 Sep 2023
Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University of Technology
Downloads 122 (592,433)

Abstract:

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4H silicon carbide, subsurface damages, physical vapor transport growth, crystalline defects

2.

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Number of pages: 24 Posted: 03 Oct 2023
Zhejiang University of Technology, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University, Zhejiang University of Technology, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center
Downloads 101 (689,572)

Abstract:

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SiC, Computer simulation, Growth from vapor, Dislocation density, Alexander-Haasen model

3.

Discrimination of Dislocation in Highly Doped N-Type 4h-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Number of pages: 14 Posted: 14 May 2024
Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Zhejiang University, Faculty of Engineering, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials and Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center
Downloads 46 (1,109,210)

Abstract:

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Silicon carbide, dislocations, electrochemical etching, holes

4.

A Novel Liquid Film Shear Polishing Technique for Silicon Carbide and its Processing Damage Mechanisms

Number of pages: 38 Posted: 17 Oct 2024
Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University of Technology, Zhejiang University of Technology, Kyoto University, affiliation not provided to SSRN, Chinese Academy of Sciences (CAS) - Institute of High Energy Physics, Chinese Academy of Sciences (CAS) - Institute of High Energy Physics, Zhejiang University, Zhejiang University - ZJU-Hangzhou Global Scientific and Technological Innovation Center and Zhejiang University of Technology
Downloads 37 (1,222,651)

Abstract:

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4H-SiC, Shear rheological polishing, Surface topography, subsurface damage, positron annihilation spectroscopy