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Jae-Hoon Han

affiliation not provided to SSRN

SCHOLARLY PAPERS

2

DOWNLOADS

188

TOTAL CITATIONS

1

Scholarly Papers (2)

1.

BEOL-Compatible Monolithic Integration of Property-Tunable Complex Oxide Single Crystals on Si for Advancing the More-than-Moore Paradigm

Number of pages: 27 Posted: 16 Sep 2025
Korea Institute of Science & Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Sogang University, Yonsei University, Korea Institute of Science and Technology (KIST), affiliation not provided to SSRN, Korea Institute of Science and Technology (KIST), affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Korea Institute of Science and Technology (KIST), Korea Institute of Science and Technology (KIST), Korea Institute of Science and Technology (KIST), Korea Institute of Science and Technology (KIST), Seoul National University - Research Institute of Advanced Materials, Korea Atomic Energy Research Institute, SunMoon University, Korea Institute of Science and Technology Information (KISTI) - Advanced Analysis Center, Sogang University, affiliation not provided to SSRN, affiliation not provided to SSRN and Korea Institute of Science and Technology (KIST)
Downloads 107 (674,591)

Abstract:

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monolithic, complex oxides, BEOL, single crystals, tunable functionalities

2.

Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide Fets

Number of pages: 17 Posted: 16 Apr 2024
Hanyang University, affiliation not provided to SSRN, affiliation not provided to SSRN, Hanyang University, affiliation not provided to SSRN, affiliation not provided to SSRN, Hanyang University and affiliation not provided to SSRN
Downloads 81 (796,622)
Citation 1

Abstract:

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amorphous indium-tin-zinc-oxide (a-ITZO), field effect transistors (FETs), electrical performance, bias stability, oxygen diffusion