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Swathy Jayaprasad

Nagoya University

Furo-cho, Chikusa-ku

Nagoya-City , 4648601

Japan

  • Nagoya University

SCHOLARLY PAPERS

3

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85

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0

Scholarly Papers (3)

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1.

Radical Enhanced Growth of Gan on Si with the Buffer Layer of Gan at a Low Temperature of 600 O C

Number of pages: 19 Posted: 25 Sep 2024
Swathy Jayaprasad, Arun kumar Dhasiyan, Naohiro Shimizu, Osamu Oda, Hiromasa Tanaka and Masaru Hori
Nagoya University, Nagoya University, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 45 (1,133,231)

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GaN, Si (111) substrate, Radical enhanced MOCVD, LT-GaN buffer layer, N-terminated Si.

2.

Crystal Quality Improvement of Gan Grown at 800 Oc on Gan/Si Templates by Radical Enhanced Metal Organic Chemical Vapor Deposition (Remocvd) Using a Water-Cooled Tmg Supply Nozzle

Number of pages: 27 Posted: 16 Aug 2025
Swathy Jayaprasad, Arun Kumar Dhasiyan, Naohiro Shimizu, Osamu Oda, Hiromasa Tanaka and Masaru Hori
Nagoya University, affiliation not provided to SSRN, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 29 (1,359,097)

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Gallium nitrite (GaN)GaN/Si templateRadical Enhanced MOCVD Crystal quality improvement

3.

Crystal quality improvement of GaN grown at 800 oC on GaN/Si templates by Radical Enhanced Metal Organic Chemical Vapor Deposition (REMOCVD) using a water-cooled TMG supply nozzle

Number of pages: 29 Posted: 20 Mar 2026
Swathy Jayaprasad, Arun Kumar Dhasiyan, Naohiro Shimizu, Osamu Oda, Hiromasa Tanaka and Masaru Hori
Nagoya University, affiliation not provided to SSRN, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 11 (1,541,665)

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Gallium nitride, REMOCVD, high-quality GaN, water-cooled nozzle.