PECVD SiN film, CF4/H2 plasma, HF/H2 plasma, surface hydrogenation, ammonia fluorosilicate
carbon nanowalls, plasma-enhanced chemical vapor deposition, nanoindentation, mechanical properties, deformation mechanism
GaN, Si (111) substrate, Radical enhanced MOCVD, LT-GaN buffer layer, N-terminated Si.
Carbon nanowalls, RI-PECVD, Wettability, Nitrogen-doped carbon nanowalls, Curly-like carbon nanowalls