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Osamu Oda

Nagoya University

Furo-cho, Chikusa-ku

Nagoya-City , 4648601

Japan

SCHOLARLY PAPERS

4

DOWNLOADS

111

TOTAL CITATIONS

0

Scholarly Papers (4)

1.

Radical Enhanced Growth of Gan on Si with the Buffer Layer of Gan at a Low Temperature of 600 O C

Number of pages: 19 Posted: 25 Sep 2024
Nagoya University, Nagoya University, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 45 (1,133,231)

Abstract:

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GaN, Si (111) substrate, Radical enhanced MOCVD, LT-GaN buffer layer, N-terminated Si.

2.

Crystal Quality Improvement of Gan Grown at 800 Oc on Gan/Si Templates by Radical Enhanced Metal Organic Chemical Vapor Deposition (Remocvd) Using a Water-Cooled Tmg Supply Nozzle

Number of pages: 27 Posted: 16 Aug 2025
Nagoya University, affiliation not provided to SSRN, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 29 (1,359,097)

Abstract:

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Gallium nitrite (GaN)GaN/Si templateRadical Enhanced MOCVD Crystal quality improvement

3.

Homoepitaxial Growth of β-Ga2O3 on Sn-doped Ga2O3 Substrates Using a Ga Source with Novel High-Density Oxygen Radicals

Number of pages: 34 Posted: 28 Mar 2026
Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 26 (1,372,601)

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β-Ga2O3, HD-ORS, high growth rate, MBE, low temperature growth

4.

Crystal quality improvement of GaN grown at 800 oC on GaN/Si templates by Radical Enhanced Metal Organic Chemical Vapor Deposition (REMOCVD) using a water-cooled TMG supply nozzle

Number of pages: 29 Posted: 20 Mar 2026
Nagoya University, affiliation not provided to SSRN, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 11 (1,541,665)

Abstract:

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Gallium nitride, REMOCVD, high-quality GaN, water-cooled nozzle.