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Arun kumar Dhasiyan

Nagoya University

Furo-cho, Chikusa-ku

Nagoya-City , 4648601

Japan

  • Nagoya University

SCHOLARLY PAPERS

2

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71

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0

Scholarly Papers (2)

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1.

Radical Enhanced Growth of Gan on Si with the Buffer Layer of Gan at a Low Temperature of 600 O C

Number of pages: 19 Posted: 25 Sep 2024
Swathy Jayaprasad, Arun kumar Dhasiyan, Naohiro Shimizu, Osamu Oda, Hiromasa Tanaka and Masaru Hori
Nagoya University, Nagoya University, Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 45 (1,133,231)

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GaN, Si (111) substrate, Radical enhanced MOCVD, LT-GaN buffer layer, N-terminated Si.

2.

Homoepitaxial Growth of β-Ga2O3 on Sn-doped Ga2O3 Substrates Using a Ga Source with Novel High-Density Oxygen Radicals

Number of pages: 34 Posted: 28 Mar 2026
Arun kumar Dhasiyan, Naohiro Shimizu, Osamu Oda and Masaru Hori
Nagoya University, Nagoya University, Nagoya University and Nagoya University
Downloads 26 (1,372,601)

Abstract:

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β-Ga2O3, HD-ORS, high growth rate, MBE, low temperature growth