Beijing, 100084
China
Tsinghua University
Chemical mechanical polishing, Numerical analysis, polishing pad, Mixed lubrication
Cobalt Wafers, Post-CMP Megasonic Cleaning, Nanoparticle Removal Mechanisms, Interactive Effects
Keywords: Chemical Mechanical Polishing, Shallow Trench Isolation, Ceria-based Slurries, Ionic Surfactants.
Cobalt Interconnects, Chemical Mechanical Polishing, Heterogeneous Materials, Various Surfactants, Polishing Mechanisms.
Post-Cu CMP cleaning, Reactive force field molecular dynamics, silica nanoparticle deposition, silica nanoparticle removal.
Cobalt, Post-CMP cleaning, Composite surfactant, Particle removal mechanism, Quantum chemical calculation
Cobalt Interconnects, Chemical Mechanical Polishing, Diethanolamine, Auxiliary Complexing Agent, Corrosion Inhibitor
Cobalt, post-CMP cleaning, Composite surfactant, Particle removal mechanism, Quantum chemical calculation
Cobalt interconnects, Post-CMP cleaning, Functional groups, Particle removal, Cleaning mechanisms
Cobalt interconnects, Chemical mechanical polishing, Patterned wafer, Pattern line width/spacing/density.
Cobalt, Post CMP cleaning, Composite surfactant, Particle removal mechanism, Quantum chemical calculation
Cobalt interconnects, Chemical mechanical polishing, Patterned wafer, Pattern line width/spacing/density
