3D NAND flash memory, area-selective atomic layer deposition, cell-to-cell interference, concave channel, confined charge trap nitride, convex channel, data retention, read disturbance
Ferroelectricity, HZO (Hf0.5Zr0.5O2), NAND Flash, Rapid Thermal Annealing, Polarization Field Screening, Interface Engineering
Ferroelectric HZO (Hf0.5Zr0.5O2), Rapid Thermal Annealing (RTA), Polarization Field Screening, Interface engineering, Gallium Oxide(Ga2O3), Thermal stability