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Taewon Hwang

Hanyang University

Seoul

Korea, Republic of (South Korea)

  • Hanyang University

SCHOLARLY PAPERS

3

DOWNLOADS

270

TOTAL CITATIONS

0

Scholarly Papers (3)

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1.

Reduction of Trap Density in High-K Dielectrics Through Optimized Ald Process and High-Pressure Deuterium Annealing

Number of pages: 24 Posted: 09 Dec 2024
Taewon Hwang, Su-Hwan Choi, Ki-Cheol Song, Yeonhee Lee, Jae-Hyeok Kwag, Jun-Yeoub Lee, Chang-Kyun Park and Jin-Seong Park
Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University and Hanyang University
Downloads 132 (561,789)

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High-k dielectric, trap density reduction, atomic layer deposition, high-pressure annealing, deuterium annealing

2.

Reliability Engineering of High-Mobility Igzo Transistors Via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Number of pages: 29 Posted: 05 Dec 2023
Yoon-Seo Kim, Taewon Hwang, Hye-Jin Oh, Joon Seok Park and Jin-Seong Park
Hanyang University, Hanyang University, Hanyang University, affiliation not provided to SSRN and Hanyang University
Downloads 95 (715,072)

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InGaZnO, plasma enhanced atomic layer deposition, heterogeneous gate insulator, high reliability, high mobility

3.

Thermally Robust HZO/poly-Si Ferroelectric Stacks Enabled by an Ultrathin Ga2O3 Interlayer

Number of pages: 28 Posted: 03 Mar 2026
Junseo Namgung, Seungho Bang, Chihwan An, Seonjun Choi, Wooyoung Kang, Yu-Jun Jeong, Yeongseo Kim, Taewon Hwang, Yei Hwan Jung, Youngji Noh, Wanki Kim, Daewon Ha, Jin-Seong Park, Seung Chul Chae, Mun Seok Jeong and Yun Heub Song
Hanyang University, Hanyang University, Seoul National University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Hanyang University, Seoul National University, Hanyang University and Hanyang University
Downloads 43 (1,222,651)

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Ferroelectric HZO (Hf0.5Zr0.5O2), Rapid Thermal Annealing (RTA), Polarization Field Screening, Interface engineering, Gallium Oxide(Ga2O3), Thermal stability