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Seung Chul Chae

Seoul National University

Kwanak-gu

Seoul, 151-742

Korea, Republic of (South Korea)

SCHOLARLY PAPERS

3

DOWNLOADS

201

TOTAL CITATIONS

1

Scholarly Papers (3)

1.

Artificial Nociceptor Based on Interface Engineered Ferroelectric Volatile Memristor

Number of pages: 22 Posted: 27 May 2024
Sejong University, Seoul National University, Sungkyunkwan University, Sejong University, Sejong University, Sejong University, Sungkyunkwan University, Seoul National University, Sejong University and Sejong University
Downloads 106 (659,652)
Citation 1

Abstract:

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Hafnium Zirconium Oxide, ferroelectric, volatile switching, Interface Engineering, Artificial nociceptor

2.

Interface-Driven Polarization Field Screening in Hf0.5Zr0.5O2/Poly-Si Stacks for 3D Ferroelectric NAND Flash Memory

Number of pages: 22 Posted: 04 Nov 2025
Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Seoul National University, Hanyang University, Seoul National University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Hanyang University and Hanyang University
Downloads 52 (1,041,696)

Abstract:

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Ferroelectricity, HZO (Hf0.5Zr0.5O2), NAND Flash, Rapid Thermal Annealing, Polarization Field Screening, Interface Engineering

3.

Thermally Robust HZO/poly-Si Ferroelectric Stacks Enabled by an Ultrathin Ga2O3 Interlayer

Number of pages: 28 Posted: 03 Mar 2026
Hanyang University, Hanyang University, Seoul National University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, Hanyang University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Hanyang University, Seoul National University, Hanyang University and Hanyang University
Downloads 43 (1,222,651)

Abstract:

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Ferroelectric HZO (Hf0.5Zr0.5O2), Rapid Thermal Annealing (RTA), Polarization Field Screening, Interface engineering, Gallium Oxide(Ga2O3), Thermal stability