Seoul
Korea, Republic of (South Korea)
Hanyang University
Indium Oxide (InOx), Plasma-Enhanced Atomic Layer Deposition (PEALD), DADI ([3-(dimethylamino)propyl] dimethyl indium) precursor, Crystallinity, Thin-Film Transistor (TFT)
Indium Oxide (InOx), Plasma-Enhanced Atomic Layer Deposition (PEALD), DADI ([3-(dimethylamino)propyl] dimethyl indium) precursor, Crystallinity, Thin-Film Transistor (TFT).
Plasma-enhanced atomic layer deposition (PEALD), silicon dioxide (SiO2), nitrous oxide (N2O) plasma reactant, silicon oxynitride (SiON), oxide semiconductor thin film transistors (TFTs), gate insulator.
High-k dielectric, trap density reduction, atomic layer deposition, high-pressure annealing, deuterium annealing
atmospheric spatial atomic layer deposition, Al2O3, process parameters, thin film encapsulation.
InGaZnO, plasma enhanced atomic layer deposition, heterogeneous gate insulator, high reliability, high mobility
Indium oxide, atomic layer deposition, oxygen reactants, substrate temperature, crystallinity.
Atmospheric spatial atomic layer deposition (AP S-ALD), In2O3, process parameters, oxide semiconductor thin film transistors (TFTs).
Plasma-polymerized-fluorocarbon, Colorless polyimide, nanostructure, Triboelectric nanogenerator, Flexible perovskite solar cell
Hierarchical wrinkle, Plasma polymer fluorocarbon, Triboelectric nanogenerators, Raindrops energy harvester, Triboelectric skin
Discrete reactant feeding (DRF), Indium oxide (In2O3), Atomic layer deposition (ALD).
Ferroelectric HZO (Hf0.5Zr0.5O2), Rapid Thermal Annealing (RTA), Polarization Field Screening, Interface engineering, Gallium Oxide(Ga2O3), Thermal stability
Silicon nitride, Plasma-enhanced atomic layer deposition, Precursor chemistry, Gate insulator, Oxide thin-film transistors
Single-Source MOCVD, β-NiS thin film, Single-source precursor Ni(dmampS)2, Surface chemical reaction, Hydrogen evolution reaction
