High performance, ZnGaO film, TFT-type solar-blind photodetector, plasma enhanced atomic layer deposition, ZnO cycle ratio
Keywords: Aluminum nitride, Density, Crystallinity, Breakdown electric field, Remote plasma atomic layer deposition
amorphous (InxGa1-x)2O3 alloy film, indium content, pulsed laser deposition, films properties, solar-blind photodetectors
RF-sputtered, β-Ga2O3, rapid thermal annealing, ultrafast process
amorphous (InxGa1-x)2O3 film, indium content, Pulsed Laser Deposition, films properties, solar-blind photodetectors
p-type, mobility, band gap, copper oxide, lithium oxide, pulsed DC
AlGaN, plasma enhanced atomic layer deposition, supercycle, Thin film