Kaohsiung, 803
Taiwan
National University of Kaohsiung
Ni-doped Ga2O3, RTA, Ozone, Annealing Temperature
Keywords: Aluminum nitride, Density, Crystallinity, Breakdown electric field, Remote plasma atomic layer deposition
ozone annealing, low SS, oxide TFT, ultra-low temperature
NiGaO, Oxygen vacancy, photodetector, oxygen flow ratio
Keywords: Aluminum nitride, atomic layer deposition, substrate temperature.
RF-sputtered, β-Ga2O3, rapid thermal annealing, ultrafast process