Copper chemical mechanical planarization (Cu CMP), Environmentally friendly inhibitor, Surfactant-polymer complex, potassium oleate, poly (sodium 4-styrene sulfonate)
Amorphous carbon, Chemical Mechanical Polishing, post-CMP cleaning, CMP contamination, Cleaning mechanism
Tungsten CMP, Fe-complex catalyst, Passivation layer, Hydroxyl radical (*OH), Fenton reaction
Silica surface modification, Selectivity, Electrostatic interaction, Barrier CMP